Electroluminescence at p-n junctions in ZnSe
Identifieur interne : 000D29 ( Main/Exploration ); précédent : 000D28; suivant : 000D30Electroluminescence at p-n junctions in ZnSe
Auteurs : RBID : ISTEX:10582_1963_Article_BF01699287.pdfAbstract
Electroluminescent radiation at p-n junctions and the photovoltaic effect in ZnSe monocrystals were investigated. The p-n junctions were prepared by melting dots of indium on p-type ZnSe (ZnSe contained Cu impurities).The measurements were made at room temperature and at −150°C. The acceptor level depths estimated from a maximum emission are in accordance with the data in the literature.The decay time of electroluminescence measured at −150°C is 2·1×10−6 sec. In sunlight a photovoltage of about 1·1 V was observed.
DOI: 10.1007/BF01699287
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